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| Voltage Variable Absorptive Attenuator, 35 dB DC - 2 GHz AT-635 V 3.00 Features q q q q q q q SO-14 35 dB Voltage Variable Attenuation @ 1 GHz Single Voltage Control 0 to -4 Volts Low DC Power Consumption: 10 mW Nanosecond Switching Speed Temperature Range: -40C to +85C Low Cost SOIC14 Plastic Package Tape and Reel Packaging Available1 Description M/A-COM's AT-635 is a GaAs MMIC voltage variable absorptive attenuator in a low cost SOIC 14-lead surface mount plastic package. The AT-635 is ideally suited for use where attenuation fine tuning, fast switching and very low power consumption are required. Typical applications include radio, cellular, GPS equipment and other Automatic Gain/Level Control circuits. The AT-635 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. Ordering Information Part Number AT-635 PIN AT-635TR Package SOIC 14-Lead Plastic Package Forward Tape & Reel Electrical Specifications, TA = +25C Parameter Insertion Loss Test Conditions2 DC - 0.1 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz 10 dB Attenuation 20 dB Attenuation 30 dB Attenuation Unit dB dB dB dB dB dB dB Min. Typ. 6.5 6.7 7.2 7.5 +/-1.0 +/-1.2 +/-1.2 2.0:1 2 4 30 13 21 34 47 18 18.5 31(3) 36(3) Max 6.7 7.0 7.4 7.8 +/-1.3 +/-1.5 +/-1.5 Flatness (Peak to Peak) DC-2 GHz VSWR Trise, Tfall Ton, Toff Transients Power Handling IP2 IP3 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Linear Operation Absolute Max Input Power Measured Relative 0.05 GHz to Input Power 0.5 - 2.0 GHz (for two-tone input power up to +5 dBm) Measured Relative 0.05 GHz to Input Power 0.5 - 2.0 GHz (for two-tone input power up to +5 dBm) nS nS mV dBm dBm dBm dBm dBm dBm 1.Refer to "Tape and Reel Packaging"Section, or contact factory. 2.All measurements at 1 GHz in a 50 system, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 A typ. 3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply. Voltage Variable Absorptive Attenuator, 35 dB Absolute Maximum Ratings1 Parameter Max. Input Power Control Voltage Operating Temperature Storage Temperature Absolute Maximum +21 dBm +5 V, -8.5 V -40C to +85C -65C to +150C AT-635 V 2.00 Functional Schematic 1.Operation of this device above any one of these parameters ma y cause permanent damage. Pin Configuration Pin No. 1 2 3 4 5 6 7 Description A GND GND GND GND GND GND Pin No. 8 9 10 11 12 13 14 Description RF2 GND GND GND GND GND RF1 Typical Performance |
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